Parallel combination of ICeGaN HEMT and IGBT delivers high efficiency at reduced cost
CAMBRIDGE, England–(BUSINESS…
Author: FOUNDER AND CTO, CGD
“Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”
CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition). For more details about Combo ICeGaN, visit Booth 2039 at the Georgia World Congress Center
